C2655

NPNPlastic-EncapsulateTransistor

C2655

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. ThetransistorissubdividedintotwogroupsOandY, accordingtoitsDCcurrentgain. Onspecialrequest,thesetransistorscanbe manufacturedindifferentpinconfigurations.

C2655

TRANSISTOR(NPN)

FEATURES Powerdissipation PCM:900mW(Tamb=25℃) Collectorcurrent ICM:2A Collector-basevoltage V(BR)CBO:50V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

C2655

iscSiliconNPNPowTransistor

DESCRIPTION •SiliconNPNepitaxialtype •Lowsaturationvoltage •Complementaryto2SA1020 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Poweramplifierapplications •Powerswitchingapplications

C2655

TO-92LPlastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●LowSaturationVoltage:VCE(sat)=0.5V(Max)(IC=1A) ●HighSpeedSwitchingTime:tstg=1μs(Typ.) ●Complementaryto2SA1020

C2655

POWERAMPLIFIERAPPLICATIONSPOWERSWITCHINGAPPLICATIONS

C2655

SiliconNPNEpitaxialType(PCTProcess)

C2655

NPNPlasticEncapsulatedTransistor

C2655

PowerAmplifierApplicationsPowerSwitchingApplications

PowerAmplifierApplications PowerSwitchingApplications •Lowsaturationvoltage:VCE(sat)=0.5V(max)(IC=1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SA1020.

CIL2655

PNP/NPNCOMPLEMENTARYPLANARSILICONTRANSISTORS