T90 Series, 30A PCB Relay

文件：470.71 Kbytes 页数：4 Pages

MACOM

丝印：T902；Package：SOT-23-THIN；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

文件：6.43013 Mbytes 页数：98 Pages

TI

德州仪器

丝印：T9002Q；Package：SOIC；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.41862 Mbytes 页数：48 Pages

TI

德州仪器

丝印：T9002Q；Package：SOIC；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.02079 Mbytes 页数：45 Pages

TI

德州仪器

丝印：T9002Q；Package：SOIC；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.45293 Mbytes 页数：49 Pages

TI

德州仪器

丝印：T9002Q；Package：SOIC；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.34303 Mbytes 页数：46 Pages

TI

德州仪器

丝印：T9002Q；Package：SOIC；TLV900x-Q1 Low-Power RRIO 1MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：3.07191 Mbytes 页数：55 Pages

TI

德州仪器

丝印：T9004；Package：WQFN；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

文件：6.43013 Mbytes 页数：98 Pages

TI

德州仪器

丝印：T9004Q；Package：TSSOP；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.41862 Mbytes 页数：48 Pages

TI

德州仪器

丝印：T9004Q；Package：TSSOP；TLV900x-Q1 Low-Power RRIO 1-MHz Automotive Operational Amplifier

1 Features • AEC-Q100 qualified for automotive applications – Temperature grade 1: –40°C to +125°C, TA – Device HBM ESD classification level 2 – Device CDM ESD classification level C6 • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset volt

文件：2.34303 Mbytes 页数：46 Pages

TI

德州仪器