首页 >T7500SLADM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
DIGITALAM/FMSIGNALPROCESSOR DESCRIPTION TheTDA7500isanintegratedcircuitimplementingafullydigital,integratedandadvancedsolutiontoperformthesignalprocessinginfrontofthepoweramplifierandbehindtheAM/FMtuneroranyotheraudiosources. ■FULLSOFTWAREFLEXIBILITYWITHTWO 24X24BITDSPCOR | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
DIGITALAM/FMSIGNALPROCESSOR DESCRIPTION TheTDA7500Aisanintegratedcircuitimplementingafullydigital,integratedandadvancedsolutiontoperformthesignalprocessinginfrontofthepoweramplifierandbehindtheAM/FMtuneroranyotheraudiosource. ■FULLSOFTWAREFLEXIBILITYWITHTWO24X24BITDSPCORES ■SOFT | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS | ||
GaAlAsIREmittingDiodeinHermeticallySealedTO18Case DESCRIPTION TSTA7500isaninfrared,875nmemittingdiodeinGaAlAstechnologyinahermeticallysealedTO-18packagewithflatglasswindow. FEATURES •Packagetype:leaded •Packageform:TO-18 •Dimensions(inmm):∅4.7 •Peakwavelength:λp=875nm •Highreliability •Highradiant | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs DESCRIPTION TSTA7500isaninfrared,875nmemittingdiodeinGaAlAs technologyinahermeticallysealedTO-18packagewithflat glasswindow. FEATURES •Packagetype:leaded •Packageform:TO-18 •Dimensions(inmm):∅4.7 •Peakwavelength:λp=875nm •Highreliability •Highradi | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,875nm,GaAlAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs DESCRIPTION TSTS7500isaninfrared,950nmemittingdiodeinGaAs technologyinahermeticallysealedTO-18packagewithflat glasswindow. FEATURES •Packagetype:leaded •Packageform:TO-18 •Dimensions(inmm):∅4.7 •Peakwavelength:λp=950nm •Highreliability •Highradian | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
InfraredEmittingDiode,RoHSCompliant,950nm,GaAs | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
GaAsIREmittingDiodesinHermeticallySealedTO18Case Description TheTSTS750.seriesareinfraredemittingdiodesinstandardGaAstechnologyinahermeticallysealedTO–18package.Theirflatglasswindowsmakethemidealforusewithexternaloptics. Features ●Suitableforpulseoperation ●Wideangleofhalfintensityϕ=±30 ●Peakwavel | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
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