首页 >T6N06T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TrenchMOStransistorStandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHT6N06TinSOT223. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-free •TrenchFET®PowerMOSFET APPLICATIONS •LoadSwitchesforPortableDevices | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOSÔtransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmode logiclevelfield-effectpower transistorinaplasticenvelope suitableforsurfacemounting. Thedevicefeaturesverylow on-stateresistanceandhas integralzenerdiodesgiving ESDprotection.Itisintendedfor useinDC-DCconvertersand | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
TrenchMOS™standardlevelFET 1.1Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusing TrenchMOS™technology. Productavailability: PHT6N06TinSOT223. 1.2Features 1.3Applications nLowon-stateresistancenLowQGD nFastswitchingnSurfacemountingpackage. nDCtoDCconverte | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
TrenchMOStransistorStandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHT6N06TinSOT223. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
6A,60V,RDS(on)44m(ohm)N-ChannelEnhancementModePowerMOSFET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
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