首页 >T6961B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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Extensionsbars,DIN3122and3123.1/46.3DIN3120/ISO1174 | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
CriticalConductionModePFCController | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
10AMPSUBMINIATUREPOWERRELAY | ZETTLER ZETTLER Electronics | ZETTLER | ||
10AMPSUBMINIATUREPOWERRELAY FEATURES •Highsensitivity,120mWpickup •Dielectricstrength5000Vrms •Isolationspacinggreaterthan8mm •10Ampswitchingcapability •ClassBinsulationstandard,ClassFversionavailable •Epoxysealedversionforautomaticwavesolderingandcleaningavailable • | AZETTLERAmerican Zettler, Inc. 美国赛特勒 | AZETTLER | ||
10AMPSUBMINIATURE FEATURES •Highsensitivity,120mWpickup •Dielectricstrength5000Vrms •Isolationspacinggreaterthan8mm •10Ampswitchingcapability •Epoxysealedversionavailable •Reinforcedinsulation,EN60730-1(VDE0631,part1) •UL,CURfileE43203 •VDEfile131637 | ZETTLER ZETTLER Electronics | ZETTLER | ||
SiliconMonolithicIntegratedCircuit | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
StandardSingle-phaseFullwave | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-3.2A,RDS(ON)=120mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-89package. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-13.2A,RDS(ON)=110mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=150mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS | ||
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-3.8A,RDS(ON)=110mW@VGS=-10V. RDS(ON)=150mW@VGS=-4.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | CET-MOS |
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