Tmax Molded Case Circuit Breakers

文件：3.14276 Mbytes 页数：81 Pages

ABB

ABB集团

Tmax Molded Case Circuit Breakers

文件：3.14276 Mbytes 页数：81 Pages

ABB

ABB集团

Tmax Molded Case Circuit Breakers

文件：3.14276 Mbytes 页数：81 Pages

ABB

ABB集团

HiPerFET Power MOSFETs Q-Class

Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Unclamped Inductive Switching (UIS) rated • Molding epoxies meet UL94V-0 flammability classification Advantages • Eas

文件：94.26 Kbytes 页数：4 Pages

IXYS

艾赛斯

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring hig

文件：45.99 Kbytes 页数：6 Pages

INTERSIL

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 3.1 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW INPUT CAPACITANCE ■ LOW GATE CHARGE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED

文件：202.63 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体