Power MOSFET 45 A, 25 V, N−Channel DPAK

Features • Planar HD3e Process for Fast Switching Performance • Low RDS(on) to Minimize Conduction Loss • Low Ciss to Minimize Driver Loss • Low Gate Charge • Optimized for High Side Switching Requirements in High−Efficiency DC−DC Converters • These are Pb−Free Devices

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N-Channel 30-V (D-S) MOSFET

文件：1.01874 Mbytes 页数：8 Pages

VBSEMI

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文件：267.29 Kbytes 页数：5 Pages

UTC

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文件：1.68776 Mbytes 页数：8 Pages

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文件：230.38 Kbytes 页数：4 Pages

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