丝印：T40；Transient Diverting Suppressor 1-Line, 40V (24VAC) EOS Protection

Description Transient Diverting Suppressors(TDS) are designed to provide high energy EOS protection with superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main protection element. During an EOS event, transient v

文件：1.12041 Mbytes 页数：9 Pages

SEMTECH

先之科

丝印：T40；Transient Diverting Suppressor 1-Line, 40V (24VAC) EOS Protection

Description Transient Diverting Suppressors(TDS) are designed to provide high energy EOS protection with superior clamping and temperature characteristics when compared to standard TVS devices. The device uses a surge rated FET as the main protection element. During an EOS event, transient v

文件：1.12041 Mbytes 页数：9 Pages

SEMTECH

先之科

丝印：T40；Package：SOT-23；TPS732 Capacitor-Free, NMOS, 250mA, Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with no output capacitor or any value or type of capacitor • Input voltage range: 1.7V to 5.5V • Ultra-low dropout voltage: 40mV typical at 250mA • Excellent load transient response—with or without optional output capacitor • NMOS topology provides low reverse leakage c

文件：2.78458 Mbytes 页数：49 Pages

TI

德州仪器

丝印：T40；Package：SOT-23；TPS732 Capacitor-Free, NMOS, 250mA, Low-Dropout Regulator With Reverse Current Protection

1 Features • Stable with no output capacitor or any value or type of capacitor • Input voltage range: 1.7V to 5.5V • Ultra-low dropout voltage: 40mV typical at 250mA • Excellent load transient response—with or without optional output capacitor • NMOS topology provides low reverse leakage c

文件：2.78458 Mbytes 页数：49 Pages

TI

德州仪器

丝印：T40L150CD2；Package：TO-263；Chip Schottky Barrier Rectifier

Features - Low forward voltage drop - Excellent high temperature stability - Excellent barrier rectifier technology - Soft, Fast switching capability

文件：140 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：T40L60CD2；Package：TO-263；SMD Schottky Barrier Rectifiers

Features - Excellent high temperature stability. - Soft, fast switching capability. - Patented super barrier rectifier technology. - Ultra low forward voltage drop.

文件：474.52 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：T4011LS；Package：SO-8；40V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), maintain superior switching performance, making it ideal for high efficiency power management applications.  DC-DC Converters  Synchronous Rectification  Power Supplies Features and Bene

文件：478.3 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T4050-6PF；Package：TO-3PF；40 A Snubberless™ Triac

Features • High current Triac • High surge current = 400 A • Max. blocking voltage = VDRM, VRRM = 600 V • Max. surge voltage = VDSM, VRSM = 700 V • IGT maximum = 50 mA • High static and dynamic commutation: – (dI/dt)c = 25.1 A/ms – dV/dt = 1000 V/μs • UL1557 certified (file ref. 81734) =

文件：218.09 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：T40560；Package：DPAK；4 A Triacs

Features  Three quadrants Triac  600 to 800 V VDRM/VRRM Applications  General purpose AC inductive loads  Motor control circuits  Small home appliances Description Based on ST’s Snubberless / logic level technology providing high commutation performances, the T4 series is suitable f

文件：491.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：T40560；Package：DPAK；4 A Triacs

Features  Three quadrants Triac  600 to 800 V VDRM/VRRM Applications  General purpose AC inductive loads  Motor control circuits  Small home appliances Description Based on ST’s Snubberless / logic level technology providing high commutation performances, the T4 series is suitable f

文件：491.25 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体