首页 >T3055AVL>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
SILICONPOWERTRANSISTORS PNPTIP2955 NPNTIP3055 TheTIP3055isaNPNepitaxial-basetransistorinTO3PNpackage.Itisintendedforpowerswitchingcircuits,seriesandshuntregulators,outputstageandhi-fiamplifiers.ThecomplementaryistheTIP2955ForPNPtypesVoltageandCurentareNegative.Complianceto | COMSET Comset Semiconductor | COMSET | ||
iscSiliconNPNPowerTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SiliconNPNPowerTransistors SiliconNPNPowerTransistors | KISEMICONDUCTOR Kwang Myoung I.S. CO.,LTD | KISEMICONDUCTOR | ||
ComplementarySiliconPowerTransistors 15AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60VOLTS,90WATTS •DCCurrentGain−hFE=20-70@IC=4.0Adc •Collector−EmitterSaturationVoltage−VCE(sat)=1.1Vdc(Max)@IC=4.0Adc •ExcellentSafeOperatingArea •ThesearePb−FreeDevices* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SiliconNPNPowerTransistor DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
ComplementarySiliconHighPowerTtransistors PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295 | TGS Tiger Electronic Co.,Ltd | TGS | ||
SiliconNPNPowerTransistors DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NPNPLANARSILICONTRANSISTOR(AUDIOPOWERAMPLIFIERDCTODCCONVERTER) AUDIOPOWERAMPLIFIER DCTODCCONVERTER HighCurrentCapability HighPowerDissipation ComplementarytoTIP2955 | WINGSWing Shing Computer Components 永盛电子永盛电子(香港)有限公司 | WINGS | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS NPN-->TIP3055 PNP-->TIP2955 Description Thedevicesaremanufacturedinepitaxial-baseplanartechnologyandaresuitableforaudio,powerlinearandswitchingapplications. Features ■Lowcollector-emittersaturationvoltage ■ComplementaryNPN-PNPtransistors Applications ■Gen | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | STMICROELECTRONICS |
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