T1G2028536-FS中文资料DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor数据手册Qorvo规格书

描述 Description

Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.
The device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.

特性 Features

• Frequency: DC to 2 GHz
• Linear gain: 18 dB at 1.2 GHz
• Low thermal resistance package

应用 Application

• Avionics
• GPS
• Professional and Military Radio
• Wideband and Narrowband Amplifiers