285W, 36V DC ??2 GHz, GaN RF Power Transistor

文件：980.12 Kbytes 页数：13 Pages

TriQuint

285W, 36V DC ??2 GHz, GaN RF Power Transistor

文件：980.12 Kbytes 页数：13 Pages

TriQuint

285W, 36V DC ??2 GHz, GaN RF Power Transistor

文件：980.12 Kbytes 页数：13 Pages

TriQuint

DC - 2 GHz, 285 Watt, 36 V GaN RF Power Transistor

Qorvo's T1G2028536-FS is a 285 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2 GHz.\nThe device is constructed with Qorvo's proven TQGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimizati • Frequency: DC to 2 GHz\n• Linear gain: 18 dB at 1.2 GHz\n• Low thermal resistance package\n;

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