首页 >T14L1024N-10PG>规格书列表
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128KX8HIGHSPEEDCMOSSTATICRAM GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | TMT | ||
128KX8HIGHSPEEDCMOSSTATICRAM GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | TMT | ||
128KX8HIGHSPEEDCMOSSTATICRAM GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | TMT | ||
128KX8HIGHSPEEDCMOSSTATICRAM GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | TMT | ||
128KX8HIGHSPEEDCMOSSTATICRAM GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC | TMTTaiwan Memory Technology 凯钰科技凯钰科技股份有限公司 | TMT |
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