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T14L1024N-10C

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

凯钰科技凯钰科技股份有限公司

T14L1024N-10H

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

凯钰科技凯钰科技股份有限公司

T14L1024N-10J

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

凯钰科技凯钰科技股份有限公司

T14L1024N-10P

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

凯钰科技凯钰科技股份有限公司

T14L1024N-10W

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

凯钰科技凯钰科技股份有限公司

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