丝印：T146；Package：SMT3；Medium power transistor (-30V, -1.0A)

Features 1) High speed switching. (Tf : Typ. : 20ns at IC = −1.0A) 2) Low saturation voltage, typically (Typ. : −150mV at IC = −500mA, IB = −50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5730K Applications Small signal low freque

文件：43.78 Kbytes 页数：4 Pages

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丝印：T146；Package：SMT3；Low Frequency Transistor(-32V, -0.8A)

Features 1) Low VCE(sat). VCE(sat) ≤ 0.5V (IC / IB= -0.5A / -50mAͅ) 2) IC = -0.8A. 3) Complements the 2SD1781K.

文件：93.36 Kbytes 页数：3 Pages

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丝印：T146；Low-frequency Transistor(-80V, -0.5A)

Features 1) Low VCE(sat). VCE(sat) =
0.2V (Typ.) (IC / IB =
0.5A /
50mA) 2) High breakdown voltage. BVCEO =
80V 3) Complements the 2SD1782K.

文件：93.45 Kbytes 页数：3 Pages

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丝印：T146；Package：SMT3；General purpose amplification (-12V, -2A)

Features 1) Acollector current is large. 2) Collector saturation voltage is low. VCE(sat)≤ −180mV at IC= −1A/ IB= −50mA Applications Low frequency amplifier Deiver

文件：68.8 Kbytes 页数：3 Pages

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丝印：T146；Package：TSMT3；Low frequency amplifier

Features 1) Collector current is large. (4A) 2) VCE(sat)≦ 250mV at IC= 2A / IB= 40mA 3) Complementary PNP Types : 2SB1707 Application LOW FREQUENCY AMPLIFIER

文件：38.84 Kbytes 页数：2 Pages

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丝印：T146；Package：SMT3；Interface and switching (30V, 200mA)

Features 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. Structure Silicon N-channel MOSFET

文件：112.67 Kbytes 页数：4 Pages

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丝印：T146；Package：SMT3；Digital transistors (built in resistor)

Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advant

文件：58.03 Kbytes 页数：3 Pages

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丝印：T146；Package：SMT3；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing

文件：67.09 Kbytes 页数：3 Pages

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丝印：T146；Package：SMT3；Digital transistors (built-in resistors)

Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thinfilm resistors with complete isolation to allow positive biasing of the input. They al

文件：66.57 Kbytes 页数：3 Pages

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丝印：T146；Package：SMT3；Digital transistors (built-in resistors)

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：66.11 Kbytes 页数：3 Pages

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