128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：86.05 Kbytes 页数：12 Pages

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128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：86.05 Kbytes 页数：12 Pages

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128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

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128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

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32K X 8 HIGH SPEED CMOS STATIC RAM?

GENERAL DESCRIPTION The T14L256A is a high speed, low power CMOS static RAM organized as 32,768 x 8 bits that operates on a single 3.3-volt power supply. This device is packaged in a standard 28-pin 300 mil SOJ or TSOP-I forward. FEATURES • High speed access time: 8/10/12/15ns(max.) • Low powe

文件：72.61 Kbytes 页数：9 Pages

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凯钰科技

32K X 8 HIGH SPEED CMOS STATIC RAM?

GENERAL DESCRIPTION The T14L256A is a high speed, low power CMOS static RAM organized as 32,768 x 8 bits that operates on a single 3.3-volt power supply. This device is packaged in a standard 28-pin 300 mil SOJ or TSOP-I forward. FEATURES • High speed access time: 8/10/12/15ns(max.) • Low powe

文件：72.61 Kbytes 页数：9 Pages

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