128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技

128K X 8 HIGH SPEED CMOS STATIC RAM

GENERAL DESCRIPTION The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance C

文件：87.6 Kbytes 页数：13 Pages

TMT

凯钰科技