丝印：T1032LJ；Package：V-DFN5045-12；100V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE

Features  Thermally Efficient Package – Cooler Running Applications  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Appl

文件：500.52 Kbytes 页数：7 Pages

DIODES

美台半导体