丝印：T04N15；Package：SOT-223；Plastic-Encapsulate MOSFETS

GENERAL DESCRIPTION This use advanced trench technology and design to provide excellent RDS(ON) with low gate charge. can be used in a wide variety of applications. FEATURE High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Excellent packag

文件：1.18452 Mbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：T04N15151；Package：SOT-223；N -Channel Power MOSFET

文件：426.35 Kbytes 页数：4 Pages

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