Low Profile International Series Power Transformer

文件：27.65 Kbytes 页数：1 Pages

RHOMBUS-IND

Top-side cooled 100 V E-mode GaN transistor

Features • 100 V enhancement mode power transistor • Top-side cooled configuration • RDS(on) = 7 mΩ • IDS(max) = 90 A • Ultra-low FOM die • Low inductance GaNPX® package • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • Very high switching fre

文件：1.32781 Mbytes 页数：17 Pages

GAN

GaAs PIN DIODES

文件：146.09 Kbytes 页数：2 Pages

MICROSEMI

美高森美

SI-61008-F

文件：226.75 Kbytes 页数：4 Pages

BEL