Mini Audio Transformers

文件：25.03 Kbytes 页数：1 Pages

RHOMBUS-IND

MULTI-PORT Double-Sided Entry.

文件：262.28 Kbytes 页数：2 Pages

HUBBELL

Gallium Arsenide PHEMT RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. • Typical W−CDMA Performance: −42 dBc ACPR, 3.55 GH

文件：532.61 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistor

Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz,

文件：190.58 Kbytes 页数：12 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体