24V Dual Line CAN/CAN-FD Bus Protector

The SZNUP2124 has been designed to protect both CAN and CAN−FD transceivers from ESD and other harmful transient voltage events. This device provides two channels of bidirectional protection in a single, ultra−compact XDFNW3 1x1 mm package. The combination of low turn−on voltage and low dynamic resi • 175°C TJ(max)\n• Low Parasitic Capacitance (\n• Wettable Flank Package\n• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements\n• Low Reverse Leakage Current (\n• IEC 61000−4−4 (EFT): 50 A (5/50 ns)\n• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.;

ONSEMI

安森美半导体

Package：3-XFDFN；包装：卷带（TR） 类别：电路保护 TVS - 二极管 描述：28V CAN-FD ESD PROTECTION IN WDF

ONSEMI

安森美半导体

Package：3-XFDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：电路保护 TVS - 二极管 描述：28V CAN-FD ESD PROTECTION IN WDF

ONSEMI

安森美半导体

SAW Filter 2595 MHz Band 41 TRX SMD 1.1x0.9 mm

文件：505.89 Kbytes 页数：8 Pages

TAI-SAW

嘉硕科技

VIDEO SWITCH

DESCRIPTION This integrated circuit provides general video switches. It is particularly intended for switching between the peri TV plug and video section of the sets. Its electrical performances make it suitable for wide bandwidth applications (Teletext, D2MAC). .2 VIDEO OUTPUTS WITH 150Ω

文件：54.32 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

文件：32.82 Kbytes 页数：4 Pages

SUTEX