20V N-Channel Enhancement Mode MOSFET

Description The SX50N02DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =53A RDS(ON)

文件：956.24 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF50N02 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) @4.5V (typ) ID 20V 5.1mΩ 50A ● High density cell design for ultra low Rdson ● Fully

文件：4.82419 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application 3.3V MCU Drive Load switch Uninterruptible power supply

文件：1.61742 Mbytes 页数：5 Pages

YFWDIODE

佑风微

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Application 3.3V MCU Drive Load switch Uninterruptible power supply

文件：1.6082 Mbytes 页数：5 Pages

YFWDIODE

佑风微