MOSFET

SiliconWisdom

矽睿半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features  30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100 UIS TESTED! 100 ΔVds TEST

文件：2.09987 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF100N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.67814 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

100A, 30V N-CHANNEL POWER MOSFET

DESCRIPTION The UT100N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)= 5.3mΩ@VGS=10 V * RDS(ON) = 8.0mΩ@VGS=4.5 V

文件：275.27 Kbytes 页数：5 Pages

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