N-Channel and P-Channel MOSFET useadvanced trench Technology

文件：2.58781 Mbytes 页数：5 Pages

DOINGTER

杜因特

N and P-Channel Enhancement Mode Power MOSFET

Description The TF4614 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● N-Channel VDS = 40V,ID =8.0A RDS(ON)

文件：4.31214 Mbytes 页数：9 Pages

TUOFENG

拓锋半导体

DUAL ENHANCEMENT MODE N-CHANNEL/P-CHANNEL)

文件：291.89 Kbytes 页数：9 Pages

UTC

友顺

Mounting Base, Triple Banana Jack and Binding Post, Miniature

文件：29.03 Kbytes 页数：1 Pages

POMONA

Pomona Electronics

40V Dual P N-Channel MOSFET

文件：238.9 Kbytes 页数：7 Pages

AOSMD

万国半导体

Heyco®-Tite EMC Brass Liquid Tight Cordgrips

文件：340.26 Kbytes 页数：1 Pages

Heyco