TF4614

N and P-Channel Enhancement Mode Power MOSFET

Description TheTF4614usesadvancedtrenchtechnologytoprovide excellentRDS(ON)andlowgatecharge.Thecomplementary MOSFETsmaybeusedtoformalevelshiftedhighsideswitch, andforahostofotherapplications. GeneralFeatures ●N-Channel VDS=40V,ID=8.0A RDS(ON)

4614

MountingBase,TripleBananaJackandBindingPost,Miniature

4614

40VDualPN-ChannelMOSFET

4614

Heyco®-TiteEMCBrassLiquidTightCordgrips

4614H-LF

Networks

4614M-LF

Networks

4614X

ThickFilmConformalSIP

Features ■Leadfreeversionavailable(seeHowtoOrder“Termination”option) ■RoHScompliant(leadfreeversion)* ■LowprofileiscompatiblewithDIPs ■Wideassortmentofpinpackagesenhancesdesignflexibility ■Ammo-pakpackagingavailable ■Recommendedforrosinfluxand

AAT4614

AdjustableCurrentLimitedLoadSwitchwithFaultFlag

Features •InputVoltageRange:2.4Vto5.5V •ProgrammableOver-CurrentThreshold •FastTransientResponse: ▪1μsResponsetoShortCircuit •LowQuiescentCurrent ▪10μATypicalwhileEnabled ▪1μAMaxwithSwitchOff(TA=25°C) •130mΩTypicalRDS(ON) •Only2.4VNeededforON/OFFCo

ACE4614B

30VComplementaryEnhancementModeFieldEffectTransistor

Description TheACE4614BusesadvancedtrenchtechnologyMOSFETstoprovideexcellentRDS(ON)andlowgatecharge.ThecomplementaryMOSFETsmaybeusedininverterandotherapplications. Features N-channel •VDS=30V •ID=9A •RDS(ON)

ACE4614BFM+H

60VComplementaryEnhancementModePowerMOSFET

Description ⚫usedininverter ⚫otherapplications Features N-Channel ⚫VDS=60V ⚫ID=5.2A ⚫RDS(ON)@VGS=10V,TYP27mΩ ⚫RDS(ON)@VGS=4.5V,TYP34mΩ P-Channel ⚫VDS=-60V ⚫ID=-4.2A ⚫RDS(ON)@VGS=-10V,TYP50mΩ ⚫RDS(ON)@VGS=-4.5V,TYP62mΩ