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ISL70024SEH	文件：477.53 Kbytes Page：14 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)45mΩ(typical) ▪Ultralowtotalgatecharge2.5nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70024SEHradiationacceptance(seeTID report) •Highdoserate(50-300rad(Si)/s):100krad(Si)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEH	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHL/PROTO	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHLSLASHPROTO	文件：477.53 Kbytes Page：14 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)45mΩ(typical) ▪Ultralowtotalgatecharge2.5nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70024SEHradiationacceptance(seeTID report) •Highdoserate(50-300rad(Si)/s):100krad(Si)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHLSLASHPROTO	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHML	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHML	文件：477.53 Kbytes Page：14 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)45mΩ(typical) ▪Ultralowtotalgatecharge2.5nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70024SEHradiationacceptance(seeTID report) •Highdoserate(50-300rad(Si)/s):100krad(Si)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHMX	文件：477.53 Kbytes Page：14 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features ▪VerylowrDS(ON)45mΩ(typical) ▪Ultralowtotalgatecharge2.5nC(typical) ▪SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg(Si) ▪ISL70024SEHradiationacceptance(seeTID report) •Highdoserate(50-300rad(Si)/s):100krad(Si)	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHMX	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
ISL70024SEHX/SAMPLE	文件：512.87 Kbytes Page：13 Pages	200V,7.5AEnhancementModeGaNPowerTransistor Features •VerylowrDS(ON)45mΩ(typical) •Ultralowtotalgatecharge2.5nC(typical) •SEEhardness(seeSEEreportfordetails) •SEL/SEBLETTH(VDS=160V,VGS=0V): 86MeV•cm2/mg •ISL70024SEHradiationacceptance(seeTIDreport) •Highdoserate(50-300rad(Si)/s):100krad(Si) •Lo	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

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