N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：496.42 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description\nThis power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is us ■ High ruggedness\n■ RDS(ON) (Max 23 Ω)@VGS=10V\n■ Gate Charge (Max 4.5nC)\n■ Improved dv/dt Capability\n■ 100% Avalanche Tested ;

Semipower

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：719.27 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel D-PAK/I-PAK/TO-92 MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：742.77 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技

N-channel MOSFET

General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET i

文件：496.42 Kbytes 页数：7 Pages

SEMIPOWER

芯派科技