SVT035R5NMJ

丝印：035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT035R5NMJ

丝印：035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT035R5NMJ

丝印：035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT035R5NMJ

丝印：035R5NMJ；Package：TO-251J-3L；100A, 30V N-CHANNEL MOSFET

DESCRIPTION TheSVT035R5ND(MJ)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan's LVMOStechnology.Theimprovedprocessandcellstructurehave beenespeciallytailoredtominimizeon-stateresistance,provide superiorswitchingperformance.

SVT035R5NMJ

低压MOS功率管

SVT035R5ND(MJ)(T)  N沟道增强型功率MOS场效应晶体管采用士兰的LVMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于不间断电源及逆变器系统的电源管理领域。\n\n; • 100A，30V，RDS(on)（典型值）=4.0mW@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快 \n• 提升了dv/dt 能力\n;