SVS7N65FJD2中文资料士兰微数据手册PDF规格书

DESCRIPTION

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s super junction MOS

technology. It achieves low conduction loss and switching losses. It

leads the design engineers to their power converters with high

efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, for example, it is suitable for

hard and soft switching topologies, Lighting, Adapters, etc.

FEATURES

 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Enhanced avalanche capability

 Extreme dv/dt rated

 High peak current capability