UF830K-MT

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTCUF830K-MTisaN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. FEATURES *RDS(ON)

UF830L-TMS-T

N-CHANNELJFETFORELECTRETCONDENSERMICROPHONE

UF830L-TMS-T

N-CHANNELMOSFETARRAYFORSWITCHING

UF830Z

4.5A,500V,1.5廓,N-CHANNELPOWERMOSFET

DESCRIPTION TheN-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplications,suchasswitchingregulators,switchingconverters,solenoid,motordriversandrelateddrivers. FEATURES *VDS=500V *ID=4.5A *RDS(ON)=1.5Ω *Sing

USF830

SuperFastRectifiers

USF830F

SuperFastRectifiers

UZ830

POWERZENERS3WATT

UZS830

POWERZENERS

DESCRIPTION Fused-in-glass,metallurgically-bonded5wattzeners. FEATURES •2TimesGreaterSurgeRatingthanConventional10WattZeners •SmallPhysicalSize

VC-830

LVPECL,LVDSCrystalOscillator

VND830

DOUBLECHANNELHIGHSIDEDRIVER

DESCRIPTION TheVND830isamonolithicdevicemadebyusingSTMicroelectronicsVIPowerM0-3Technology,intendedfordrivinganykindofloadwithonesideconnectedtoground. ActiveVCCpinvoltageclampprotectsthedevicesagainstlowenergyspikes(seeISO7637transientcompatibilitytable)