SVD2N60T中文资料2A, 600V N-Channel MOSFET数据手册Silan规格书
SVD2N60T规格书详情
描述 Description
GENERAL DESCRIPTION
SVD2N60T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary SRin™ structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.FEATURES
* 2A,600V,RDS(on)(typ.)=4.0W@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability
特性 Features
* 2A,600V,RDS(on)(typ.)=4.0W@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability
技术参数
- 型号：
SVD2N60T
- 制造商：
SILAN
- 制造商全称：
Silan Microelectronics Joint-stock
- 功能描述：
2A, 600V NChannel MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILAN |
1932+ |
TO-220 |
827 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Silan |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SILAN/士兰微 |
21+ |
TO-220 |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
SILAN/士兰微 |
2023+ |
TO-220 |
30000 |
原厂全新正品旗舰店优势现货 |
询价 | ||
SILAN/士兰微 |
21+ |
TO-220 |
30000 |
询价 | |||
SILAN/士兰微 |
24+ |
TO-220F |
12000 |
原装正品真实现货杜绝虚假 |
询价 | ||
士兰微 |
24+ |
TO263 |
38520 |
一级代理/放心购买 |
询价 | ||
SANYO |
23+ |
SMD |
5000 |
原装正品,假一罚十 |
询价 | ||
SILAN士兰微 |
23+ |
TO-220-3L |
22820 |
原装正品，支持实单 |
询价 | ||
SILAN(士兰微) |
2447 |
TO-220-3L |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 |
