SUP50N03-5M1P资料使用说明书库存现货ISC-114ic电子网

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SUP50N03-5M1P	文件：182.58 Kbytes Page：7 Pages	N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SUP50N03-5M1P	文件：333.15 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=50A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SUP50N03-5M1P-GE3	文件：182.58 Kbytes Page：7 Pages	N-Channel 30 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSupply -SecondarySynchronousRectification •DC/DCConverter	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
SUP50N03-5M1P-GE3	文件：1.13698 Mbytes Page：10 Pages	N-Channel 30 V (D-S) 175 째C MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI

更多SUP50N03-5M1P供应商更新时间2025-5-14 15:36:00