Advanced N-Ch Power MOSFET

HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS(on)=1.23Ω(Typ.) • Low gate charge: Qg=10.5nC (Typ.) • Low reverse transfer capacitance: Crss=2pF (Typ.) • RoHS compliant device • 100 avalanche tested

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KODENSHI

可天士

Advanced N-Ch Power MOSFET

Kodenshi-AUK

Switchmode Full Plastic Ultra-fast Power Rectifiers

文件：198.58 Kbytes 页数：2 Pages

MOSPEC

统懋

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex VN0550 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

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SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

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SUTEX