Advanced N-Ch Power MOSFET

HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS(on)=1.23Ω(Typ.) • Low gate charge: Qg=10.5nC (Typ.) • Low reverse transfer capacitance: Crss=2pF (Typ.) • RoHS compliant device • 100 avalanche tested

文件：376.67 Kbytes 页数：8 Pages

KODENSHI

可天士

Advanced N-Ch Power MOSFET

HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS(on)=1.23Ω(Typ.) • Low gate charge: Qg=10.5nC (Typ.) • Low reverse transfer capacitance: Crss=2pF (Typ.) • RoHS compliant device • 100 avalanche tested

文件：376.67 Kbytes 页数：8 Pages

KODENSHI

可天士

丝印：SUN07A65；Package：TO-252；HIGH SPEED SWITCHING APPLICATION

Features • Low drain-source On resistance: RDS(on)=1.2Ω (Typ.) • Low gate charge: Qg=21nC (Typ.) • Low reverse transfer capacitance: Crss=5pF (Typ.) • Lower EMI noise • RoHS compliant device • 100% avalanche tested

文件：353.98 Kbytes 页数：8 Pages

KODENSHI

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N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

文件：1.08797 Mbytes 页数：9 Pages

VBSEMI

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New Generation N-Ch Power MOSFET

文件：538.72 Kbytes 页数：8 Pages

KODENSHI

可天士

Power MOSFET

文件：1.07808 Mbytes 页数：9 Pages

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N-Channel MOSFET uses advanced trench technology

文件：1.92853 Mbytes 页数：5 Pages

DOINGTER

杜因特

New Generation N-Ch Power MOSFET

文件：470.17 Kbytes 页数：8 Pages

KODENSHI

可天士

New Generation N-Ch Power MOSFET

文件：470.48 Kbytes 页数：8 Pages

KODENSHI

可天士