N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Power supplies

文件：191.83 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Synchronous rectification • Power supplies

文件：191.83 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 200 V (D-S) 175 °C MOSFET

·ThunderFET® power MOSFET\n·Low RDS - Qg figure-of-merit (FOM)\n·Maximum 175 °C junction temperature;

Vishay

威世

isc N-Channel MOSFET Transistor

文件：303.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) 175 째C MOSFET

文件：159.71 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司