N-Channel 75-V (D-S) 200째C MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 10V gate drive. The saturated output impedance is best fit at the

文件：177.84 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=110A@ TC=25℃ ·Drain Source Voltage -VDSS=75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：306.04 Kbytes 页数：2 Pages

ISC

无锡固电

VISHAY/威世
NA

VISHAY/威世

上传：深圳市宏芯微科技有限公司

VISHAY
NA

VishayVishay Siliconix

威世

上传：海芯未来半导体电子（深圳）有限公司

VISHAY
NA

VishayVishay Siliconix

威世

上传：海芯未来半导体电子（深圳）有限公司