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SUB85N08-08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:345.35 Kbytes 页数:2 Pages

ISC

无锡固电

SUB85N08-08

N-Channel 75-V (D-S) 175 Degree Celcious MOSFET

文件:63.39 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

SUB85N08-08

N-Channel 75-V (D-S) 175C MOSFET

Vishay

威世

SUP85N08-08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 85A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:372.31 Kbytes 页数:2 Pages

ISC

无锡固电

SUP85N08-08

N-Channel 75-V (D-S) 175 Degree Celcious MOSFET

文件:63.39 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

SUP85N08-08

N-Channel 75-V (D-S) 175C MOSFET

N-Channel 75-V (D-S) 175°C MOSFET 175°C Rated Maximum Junction Temperature TrenchFET® Power MOSFETs

文件:64.22 Kbytes 页数:5 Pages

VishayVishay Siliconix

威世

详细参数

  • 型号:

    SUB85N08-08

  • 功能描述:

    MOSFET 75V 85A 250W

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
VISHAY/威世
17+
TO-263
31518
原装正品 可含税交易
询价
VISHAY
24+
TO-263
8866
询价
VISHAY
18+
TO263
41200
原装正品,现货特价
询价
VISHAY
08+
TO-263
20000
普通
询价
VISHAY/威世
23+
D2PAK(TO-263)
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
VISHAY/威世
2022+
D2PAK(TO-263)
48000
只做原装,绝对原装,假一罚十
询价
VISHAY
25+
TO-263
16105
询价
VISHAY/威世
24+
NA/
8600
原厂直销,现货供应,账期支持!
询价
Vishay
2024+
D2PAK(TO-263
50000
原装现货
询价
更多SUB85N08-08供应商 更新时间2025-10-12 14:00:00