N-channel 600 V, 0.030 Ohm, 74 A, MDmesh(TM) II Power MOSFET Max247

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most The worldwide best R\nDS(on)in Max247\n100% avalanche tested\nLow input capacitance and gate charge\nLow gate input resistance;

ST

意法半导体

N-channel 600 V - 0.035 廓 - 80 A - Max247 second generation MDmesh??Power MOSFET

文件：130.81 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

ROHM
SMD3

ROHM

罗姆

上传：佛山市芯光达科技有限公司