N沟道600 V、0.06 Ohm典型值、42 A MDmesh M2功率MOSFET，TO-247长引线封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：776.23 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：719.24 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：717.64 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体