N沟道950 V、0.275 Ohm典型值、17.5 A MDmesh K5功率MOSFET，TO-247长引线封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Ultra low gate charge

文件：1.09665 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 950 V, 0.275 廓, 17.5 A SuperMESH 5??Power MOSFET in D짼PAK, TO-220FP, TO-220 and TO-247 packages

文件：1.46378 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 950V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 330mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, D

文件：400.08 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 17.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 950V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.33Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：343.89 Kbytes 页数：2 Pages

ISC

无锡固电