isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.2A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.52 Kbytes 页数：2 Pages

ISC

无锡固电

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggednessand superior switching performance. ■ TYPICAL RDs(0

文件：134.21 Kbytes 页数：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. ■ TYPICAL RDS(

文件：45.09 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

Trans MOSFET N-CH 800V 7.2A 3-Pin(3+Tab) TO-247

NJS

新泽西半导体