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STW7NA100

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=1.45Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■GATECHARGEMINIMISED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SW

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STW7NA100

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=1.45Q ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■GATECHARGEMINIMISED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SW

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

STW7NA100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW7NA100

Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247;

NJS

New Jersey Semiconductor

STW7NA100FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=1.45Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■GATECHARGEMINIMISED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SW

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STH7NA100FI

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7.0A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.7Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STH7NA100FI

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS ■TYPICALRDS(on)=1.45Ω ■±30VGATETOSOURCEVOLTAGERATING ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■GATECHARGEMINIMISED ■REDUCEDTHRESHOLDVOLTAGESPREAD APPLICATIONS ■HIGHCURRENT,HIGHSPEEDSWITCHING ■SW

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

技术参数

  • Maximum Gate Source Voltage:

    ±30V

  • Maximum Drain Source Voltage:

    1000V

  • Maximum Continuous Drain Current:

    7A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

供应商型号品牌批号封装库存备注价格
24+
N/A
3000
询价
ST
06+
TO-247
2380
原装
询价
ST
23+
TO-247
8795
询价
ST
25+23+
TO-247
28996
绝对原装正品全新进口深圳现货
询价
ST
2447
NA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ST
22+
TO-247
6000
十年配单,只做原装
询价
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ST/意法半导体
22+
TO-247
25000
只做原装进口现货,专注配单
询价
ST
23+24
TO-247
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
询价
ST/意法
22+
TO-247
99281
询价
更多STW7NA100供应商 更新时间2025-7-28 10:20:00