isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 1000V - 2.7??- 3.5A - TO-220/TO-220FP/TO-247 Zener-protected SuperMESH??Power MOSFET

Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on STs well-established strip based PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most d

文件：435.37 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 1000 V, 2.7 廓, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3??Power MOSFET

文件：462.08 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道1000V - 3 Ohm - 3.5A - TO-247有齐纳管保护的SUPERMESH MOSFET

The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH™ layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applic • Extremely high dv/dt capability \n• Gate charge minimized \n• 100% avalanche tested \n• Very good manufacturing repeatibility \n• Very low intrinsic capacitances;

ST

意法半导体