Extremely low gate charge

文件：681.82 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：913.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、0.045 Ohm典型值、52 A MDmesh M2功率MOSFET，TO247-4封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

ST

意法半导体