丝印：48N60M6；Package：TO-247；N-channel 600 V, 61 mΩ typ., 39 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters • Boost PFC converters Description The new MDmesh™ M6 technology incorporat

文件：465.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道600 V、61 mOhm典型值、39 A MDmesh M6功率MOSFET，TO-247封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

N沟道600 V、61 mOhm典型值、39 A MDmesh M6功率MOSFET，TO247-4封装

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected \n• Excellent switching performance thanks to the extra driving source pin;

ST

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N-channel 600 V, 61 m typ., 39 A, MDmeshTM M6 Power MOSFET in a TO‑247 long leads package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：494.94 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体