N沟道600 V、0.076 Ohm典型值、34 A MDmesh M2 EP功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• Very low turn-off switching losses \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

丝印：42N60M2EP；Package：TO-247；N-channel 600 V, 0.076 廓 typ., 34 A MDmesh??M2 EP Power MOSFETs in D짼PAK, TO-220 and TO-247 packages

文件：393.07 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.076 廓 typ., 34 A MDmesh??M2 EP Power MOSFETs in D짼PAK, TO-220 and TO-247 packages

文件：393.07 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.076 ??typ., 34 A MDmesh??M2 EP Power MOSFETs in TO-220FP and TO-3PF packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses,

文件：638.93 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.076 ??typ., 34 A MDmesh??M2 EP Power MOSFETs in TO-220FP and TO-3PF packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses,

文件：638.93 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体