N沟道900 V、0.088 Ohm典型值、40 A MDmesh K5功率MOSFET，TO-247封装

These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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意法半导体

丝印：40N90K5；Package：TO-247；N-channel 900 V, 0.088 ??typ., 40 A MDmesh??K5 Power MOSFETs in TO-247 and TO-247 long leads packages

文件：779.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 900 V, 0.088 ??typ., 40 A MDmesh??K5 Power MOSFETs in TO-247 and TO-247 long leads packages

文件：779.12 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

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TO247

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上传：深圳市亚泰盈科电子有限公司

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TO-247

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上传：深圳市轩嘉盛电子有限公司