首页>STW34NM60ND>规格书详情
STW34NM60ND中文资料N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-247数据手册ST规格书
STW34NM60ND规格书详情
描述 Description
These devices are N-channel FDmesh™ V Power MOSFETs produced using ST’s MDmesh™ V technology, which is based on an innovative proprietary vertical structure. The resulting product boasts an extremely low on-resistance that is unrivaled among silicon-based Power MOSFETs, and superior switching performance with intrinsic fast-recovery body diode.
特性 Features
The world’s best R
DS(on)in TO-220 amongst the fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche capabilities
技术参数
- 型号：
STW34NM60ND
- 功能描述：
MOSFET N-Ch 600V 0.097 Ohm 29A FDmesh II FD
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
24+ |
TO-247-3 |
10000 |
十年沉淀唯有原装 |
询价 | ||
ST/意法 |
25+ |
原厂原封可拆 |
54685 |
百分百原装现货有单来谈 |
询价 | ||
ON |
24+ |
TO-3P |
6000 |
原装正品,欢迎咨询 |
询价 | ||
ST/意法半导体 |
2511 |
TO-247-3 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
ST |
23+ |
NA |
5400 |
原装现货,实单价格可谈 |
询价 | ||
ST/意法 |
23+ |
TO247 |
12500 |
只做进口原装假一罚百 |
询价 | ||
ST |
23+ |
TO247 |
6996 |
只做原装正品现货 |
询价 | ||
ST(意法半导体) |
2024+ |
TO-247-3 |
500000 |
诚信服务,绝对原装原盘 |
询价 | ||
ST/意法半导体 |
24+ |
TO-247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法 |
24+ |
SOT-23 |
9600 |
原装现货,优势供应,支持实单! |
询价 |
