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STD2N105K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1050V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STD2N105K5

N-channel1050V,6廓typ.,1.5AMDmesh??K5PowerMOSFETsinDPAK,TO-220andIPAKpackages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STFW2N105K5

N-channel1050V,6廓typ.,1.5AZener-protectedSuperMESH??5PowerMOSFETinaTO-3PFpackage

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP2N105K5

N-channel1050V,6廓typ.,1.5AMDmesh??K5PowerMOSFETsinDPAK,TO-220andIPAKpackages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STP2N105K5

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1050V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8Ω(Max)@VGS=10V APPLICATIONS ·Switching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU2N105K5

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=1.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1050V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU2N105K5

N-channel1050V,6廓typ.,1.5AMDmesh??K5PowerMOSFETsinDPAK,TO-220andIPAKpackages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

TPSTD2N105K5

1050VN-ChannelMOSFET

Application »Adaptor «Charger «Powermanagement oSMPSStandbyPower

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

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