isc N-Channel Mosfet Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching power

文件：352.63 Kbytes 页数：2 Pages

ISC

无锡固电

Extremely low gate charge

文件：1.2408 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.15 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-247封装

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Extremely low gate charge

文件：1.2408 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

文件：1.2408 Mbytes 页数：22 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 180mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.21 Kbytes 页数：2 Pages

ISC

无锡固电