N-channel 600 V, 0.175 typ., 18 A MDmeshTM M2 EP Power MOSFET in a TO-247 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

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N沟道600 V、0.175 Ohm典型值、18 A MDmesh M2 EP功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it su • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• Very low turn-off switching losses \n• 100% avalanche tested \n• Zener-protected;

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N-channel 600 V, 0.175 廓 typ., 18 A MDmesh??M2 EP Power MOSFET in a TO-220FP package

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N-channel 600 V, 0.175 typ., 18 A MDmeshTM M2 EP Power MOSFET in a TO-220FP ultra narrow leads package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to

文件：271.66 Kbytes 页数：13 Pages

STMICROELECTRONICS

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Extremely low gate charge

文件：721.52 Kbytes 页数：16 Pages

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